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Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225
Figure 1: MD configuration of a GaN step with a step height of h = 2c during indentation of surface atoms wit...
Figure 2: Stress fluctuation multiplied by the squared per-atom volume along the y-axis of the upper Ga atom...
Figure 3: Local [001]-oriented indentation modulus for three different step heights along the y-axis. Measure...
Figure 4: [001]-oriented indentation modulus for three different step heights along y. Measured by indenting ...
Figure 5: Schematic FEM configuration of the indentation on top of the step by using a flatpunch indenter.
Figure 6: FEM simulation of indentation modulus for three different step heights by using a flatpunch indente...
Figure 7: Topography (a) and indentation modulus (b) map of the area around a GaN step.